Si-Global Radiation Sensor incl. measuring amplifier
The Sensor measures the global radiation, basing on a silicon diode with diffusor and PMMA-dome.
Because of its good cost-performance ration it is especially suitable as reference for photovoltaic systems, including built-in measuring amplifier.
- Technical Specification
- Variations
- Measuring range: 0...1300 W/m²
- Spectral sensitivity: 380 nm...1100 nm
- max. spectr. sensitivity: 780 nm
- Operating temperature: -20...+60 °C
- Output: 6003.1000: 0... 5 V,
6003.2000: 4...20 mA
6003.3000: 0...10 V
- Power supply: 9...30 VDC
- Diffusor: PTFE
- Dom: PMMA (UV- pervious)
- Cosinus correction: f2 < 6 %
- Linearity: 6003.1000: < 5 %
6003.2000: < 5 %
6003.3000: < 3 %
- Absolute error: < 10 %
- Weight: approx. 100 g
- note 6003.1000Si-Global radiation sensor 0...5 V
- note 6003.2000Si-Global radiation sensor 4...20 mA
- note 6003.3000Si-Global radiation sensor 0...10 V